BFP 740F H6327
- Manufacturer Infineon Technologies
- Part Number BFP 740F H6327
- Description RF Bipolar Transistors RF BIP TRANSISTOR
- Category RF Bipolar Transistors
Specifications
| Package | TSFP-4 |
| Min. Pack | 1 |
| Emitter- Base Voltage VEBO | 1.2 V |
| Width | 0.8 mm |
| Part # Aliases | BFP740FH6327XTSA1 BFP74FH6327XT SP000750416 |
| Type | RF Silicon Germanium |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 400 |
| Unit Weight | 0.000066 oz |
| Collector- Emitter Voltage VCEO Max | 4 V |
| Product Type | RF Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar |
| Length | 1.4 mm |
| Operating Frequency | 42 GHz |
| RoHS | Y |
| Continuous Collector Current | 30 mA |
| Subcategory | Transistors |
| Series | BFP740 |
| Height | 0.55 mm |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 13 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 160 mW |
| Technology | SiGe |
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