BFP 740 H6327
- Manufacturer Infineon Technologies
- Part Number BFP 740 H6327
- Description RF Bipolar Transistors RF BIP TRANSISTOR
- Category RF Bipolar Transistors
Specifications
| Package | SOT-343 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 1.2 V |
| Part # Aliases | BFP740H6327XTSA1 BFP74H6327XT SP000750414 |
| Type | RF Silicon Germanium |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 160 |
| Unit Weight | 0.000066 oz |
| Collector- Emitter Voltage VCEO Max | 4 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar |
| Operating Frequency | 42 GHz |
| RoHS | Y |
| Continuous Collector Current | 30 mA |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | BFP740 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 160 mW |
| Technology | SiGe |
| Brand | Infineon Technologies |
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