BFP 650 H6327
- Manufacturer Infineon Technologies
- Part Number BFP 650 H6327
- Description RF Bipolar Transistors RF BIP TRANSISTOR
- Category RF Bipolar Transistors
Specifications
| Package | SOT-343 |
| Min. Pack | 1 |
| Mounting Style | SMD/SMT |
| Type | RF Silicon Germanium |
| Product Category | RF Bipolar Transistors |
| Transistor Type | Bipolar |
| Subcategory | Transistors |
| Series | BFP650 |
| Brand | Infineon Technologies |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Packaging | |
| Collector- Emitter Voltage VCEO Max | 4 V |
| Unit Weight | 0.001093 oz |
| Emitter- Base Voltage VEBO | 1.2 V |
| Product Type | RF Bipolar Transistors |
| Operating Frequency | 37 GHz |
| Part # Aliases | BFP650H6327XTSA1 BFP65H6327XT SP000750406 |
| Continuous Collector Current | 150 mA |
| Technology | SiGe |
| RoHS | Y |
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