BFN18H6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BFN18H6327XTSA1
- Description Bipolar Transistors - BJT AF TRANSISTORS
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-89-4 |
| Min. Pack | 1 |
| Continuous Collector Current | 200 mA |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 500 mV |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Brand | Infineon Technologies |
| Maximum DC Collector Current | 500 mA |
| Gain Bandwidth Product fT | 70 MHz |
| Collector- Emitter Voltage VCEO Max | 300 V |
| Mounting Style | SMD/SMT |
| Packaging | |
| Collector- Base Voltage VCBO | 300 V |
| Part # Aliases | 18 BFN H6327 SP001125290 |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
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