BFG35,115
- Manufacturer NXP Semiconductors
- Part Number BFG35,115
- Description RF Bipolar Transistors NPN 10V 150mA 4GHZ
- Category RF Bipolar Transistors
Specifications
| Package | SOT-223 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 2 V |
| Width | 3.7 mm |
| Part # Aliases | 933919910115 |
| Type | RF Bipolar Small Signal |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| Brand | NXP Semiconductors |
| DC Current Gain hFE Max | 25 |
| Unit Weight | 0.003527 oz |
| Collector- Emitter Voltage VCEO Max | 18 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar |
| Length | 6.7 mm |
| Maximum DC Collector Current | 0.15 A |
| Operating Frequency | 4000 MHz |
| RoHS | Y |
| Continuous Collector Current | 0.15 A |
| Gain Bandwidth Product fT | 4000 MHz |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Height | 1.7 mm |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 25 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 1000 mW |
| Technology | Si |
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