BF 999 E6327
- Manufacturer Infineon Technologies
- Part Number BF 999 E6327
- Description RF MOSFET Transistors Silicon N-Channel MOSFET Triode
- Category RF MOSFET Transistors
Specifications
| Package | SOT-23 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 6.5 V |
| Width | 1.3 mm |
| Part # Aliases | BF999E6327HTSA1 BF999E6327XT SP000010985 |
| Type | RF Small Signal MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | Infineon Technologies |
| Unit Weight | 0.000282 oz |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 30 A |
| Length | 2.9 mm |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | BF999 |
| Height | 1 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 mW |
| Technology | Si |
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