BD912
- Manufacturer STMicroelectronics
- Part Number BD912
- Description Bipolar Transistors - BJT PNP General Purpose
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Width | 4.6 mm (Max) |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | STMicroelectronics |
| DC Current Gain hFE Max | 150 |
| Unit Weight | 0.211644 oz |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 10.4 mm (Max) |
| Maximum DC Collector Current | 15 A |
| RoHS | Y |
| Gain Bandwidth Product fT | 3 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BD912 |
| Height | 9.15 mm (Max) |
| Collector- Base Voltage VCBO | 100 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 90 W |
| DC Collector/Base Gain hfe Min | 15 |
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