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BD911

  • Manufacturer STMicroelectronics
  • Part Number BD911
  • Description Bipolar Transistors - BJT NPN General Purpose
  • Category Bipolar Transistors - BJT
Specifications
Package TO-220-3
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Width 4.6 mm
Product Category Bipolar Transistors - BJT
Brand STMicroelectronics
DC Current Gain hFE Max 150
Unit Weight 0.211644 oz
Collector- Emitter Voltage VCEO Max 100 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 3 MHz
Length 10.4 mm
Maximum DC Collector Current 15 A
RoHS Y
Collector-Emitter Saturation Voltage 1 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series BD911
Height 9.15 mm
Mounting Style Through Hole
Collector- Base Voltage VCBO 100 V
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 90 W
DC Collector/Base Gain hfe Min 15

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