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BD179G

  • Manufacturer ON Semiconductor
  • Part Number BD179G
  • Description Bipolar Transistors - BJT 3A 80V 30W NPN
  • Category Bipolar Transistors - BJT
Specifications
Package TO-225-3
Packaging Bulk
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Width 2.66 mm
Mounting Style Through Hole
Product Category Bipolar Transistors - BJT
Brand ON Semiconductor
Unit Weight 0.022575 oz
Collector- Emitter Voltage VCEO Max 80 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 3 MHz
Length 7.74 mm
Maximum DC Collector Current 3 A
RoHS Y
Continuous Collector Current 3 A
Collector-Emitter Saturation Voltage 0.8 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series BD179
Height 11.04 mm
Collector- Base Voltage VCBO 80 V
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 30 W
DC Collector/Base Gain hfe Min 63

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