BD159G
- Manufacturer ON Semiconductor
- Part Number BD159G
- Description Bipolar Transistors - BJT 0.5A 350V 20W NPN
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-225-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 3 mm |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Unit Weight | 0.007478 oz |
| Collector- Emitter Voltage VCEO Max | 350 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 7.8 mm |
| Maximum DC Collector Current | 0.5 A |
| RoHS | Y |
| Continuous Collector Current | 0.5 A |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BD159 |
| Height | 11.1 mm |
| Collector- Base Voltage VCBO | 375 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 20 W |
| DC Collector/Base Gain hfe Min | 30 |
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