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BCY58-X

  • Manufacturer Central Semiconductor
  • Part Number BCY58-X
  • Description Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W
  • Category Bipolar Transistors - BJT
Specifications
Package TO-18
Packaging Bulk
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 7 V
Part # Aliases BCY58-X PBFREE
Product Category Bipolar Transistors - BJT
Brand Central Semiconductor
Collector- Emitter Voltage VCEO Max 32 V
Product Type BJTs - Bipolar Transistors
Maximum Operating Temperature + 200 C
Gain Bandwidth Product fT 150 MHz
Maximum DC Collector Current 200 mA
RoHS Y
Continuous Collector Current 100 mA
Collector-Emitter Saturation Voltage 0.7 V
Configuration Single
Subcategory Transistors
Mounting Style Through Hole
Collector- Base Voltage VCBO 32 V
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 340 mW
Technology Si
DC Collector/Base Gain hfe Min 60 At 100 mA, 1 V

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