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BCX51TA

  • Manufacturer Diodes Incorporated
  • Part Number BCX51TA
  • Description Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
  • Category Bipolar Transistors - BJT
Specifications
Package SOT-89-3
Min. Pack 1
Transistor Polarity PNP
Emitter- Base Voltage VEBO 5 V
Width 2.5 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 25 at 5 mA, 2 V
Unit Weight 0.001834 oz
Collector- Emitter Voltage VCEO Max 45 V
Configuration Single
Maximum Operating Temperature + 150 C
Length 4.5 mm
Maximum DC Collector Current 1 A
RoHS Y
Gain Bandwidth Product fT 150 MHz
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series BCX51
Height 1.5 mm
Packaging
Collector- Base Voltage VCBO 45 V
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 1000 mW
DC Collector/Base Gain hfe Min 25 at 5 mA, 2 V, 40 at 150 mA, 2 V, 25 at 500 mA, 2 V

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