BCW66KHE6327HTSA1
- Manufacturer Infineon Technologies
- Part Number BCW66KHE6327HTSA1
- Description Bipolar Transistors - BJT NPN 45.0 V 100 mA
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | 66KH BCW BCW66KHE6327XT E6327 SP000271906 |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 630 |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 170 MHz |
| Maximum DC Collector Current | 1 A |
| RoHS | Y |
| Continuous Collector Current | 800 mA |
| Collector-Emitter Saturation Voltage | 0.45 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BCW66 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 75 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 500 mW |
| DC Collector/Base Gain hfe Min | 250 |
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