BC858BE6327HTSA1
- Manufacturer Infineon Technologies
- Part Number BC858BE6327HTSA1
- Description Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | 858B BC BC858BE6327XT E6327 SP000010634 |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 450 |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| Maximum DC Collector Current | 200 mA |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Collector-Emitter Saturation Voltage | 250 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC858 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 30 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 330 mW |
| DC Collector/Base Gain hfe Min | 200 |
Need pricing on BC858BE6327HTSA1?
Tell us your quantity and target price. We reply the same business day.