BC858B TR
- Manufacturer Central Semiconductor
- Part Number BC858B TR
- Description Bipolar Transistors - BJT PNP 30Vebo 30Vceo 5.0Vebo 100mA 350mW
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Packaging | Reel |
| Min. Pack | 9,000 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | BC858B PBFREE TR |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 475 at 2 mA, 5 V |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum DC Collector Current | 200 mA |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Collector-Emitter Saturation Voltage | 0.65 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC858B |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 30 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 350 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 220 at 2 mA, 5 V |
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