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BC858A-7-F

  • Manufacturer Diodes Incorporated
  • Part Number BC858A-7-F
  • Description Bipolar Transistors - BJT PNP BIPOLAR
  • Category Bipolar Transistors - BJT
Specifications
Package SOT-23-3
Min. Pack 1
Transistor Polarity PNP
Emitter- Base Voltage VEBO - 5 V
Width 1.4 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
DC Collector/Base Gain hfe Min 125
Unit Weight 0.000282 oz
Collector- Emitter Voltage VCEO Max - 30 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 200 MHz
Length 3.05 mm
Maximum DC Collector Current - 200 mA
RoHS Y
Collector-Emitter Saturation Voltage - 650 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series BC858
Height 1 mm
Packaging
Collector- Base Voltage VCBO - 30 V
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 300 mW
Brand Diodes Incorporated

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