BC857SH6327XT
- Manufacturer Infineon Technologies
- Part Number BC857SH6327XT
- Description Bipolar Transistors - BJT AF TRANSISTOR
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | 857S BC BC857SH6327XTSA1 H6327 SP000747456 |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 630 |
| Unit Weight | 0.000265 oz |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 200 mA |
| Continuous Collector Current | 100 mA |
| Collector-Emitter Saturation Voltage | 250 mV |
| Configuration | Dual |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 250 mW |
| DC Collector/Base Gain hfe Min | 200 |
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