BC857BW-G
- Manufacturer Comchip Technology
- Part Number BC857BW-G
- Description Bipolar Transistors - BJT -50V, .-1A
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Comchip Technology |
| DC Current Gain hFE Max | 475 |
| Unit Weight | 0.000176 oz |
| Collector- Emitter Voltage VCEO Max | - 45 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum DC Collector Current | - 0.1 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | - 0.65 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC857 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 150 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 220 |
Need pricing on BC857BW-G?
Tell us your quantity and target price. We reply the same business day.