BC857BTQ-7
- Manufacturer Diodes Incorporated
- Part Number BC857BTQ-7
- Description Bipolar Transistors - BJT General Purpose Transistor
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-523-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 475 |
| Collector- Emitter Voltage VCEO Max | - 45 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 100 MHz |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Continuous Collector Current | - 100 mA |
| Collector-Emitter Saturation Voltage | - 250 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 350 mW |
| Technology | Si |
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