BC857BLP4-7B
- Manufacturer Diodes Incorporated
- Part Number BC857BLP4-7B
- Description Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
- Category Bipolar Transistors - BJT
Specifications
| Package | DFN1006H4-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max | - 45 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum DC Collector Current | - 200 mA |
| RoHS | Y |
| Continuous Collector Current | - 100 mA |
| Collector-Emitter Saturation Voltage | - 650 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | BC857B |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 mW |
| DC Collector/Base Gain hfe Min | 220 at -2 mA, - 5 V |
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