BC857BLP-7
- Manufacturer Diodes Incorporated
- Part Number BC857BLP-7
- Description Bipolar Transistors - BJT 250mW 45V
- Category Bipolar Transistors - BJT
Specifications
| Package | DFN1006-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 0.6 mm |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 475 |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 200 MHz |
| Length | 1 mm |
| Maximum DC Collector Current | 0.1 A |
| Collector-Emitter Saturation Voltage | 650 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC857B |
| Height | 1.5 mm |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 mW |
| DC Collector/Base Gain hfe Min | 220 |
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