BC848C RF
- Manufacturer Taiwan Semiconductor
- Part Number BC848C RF
- Description Bipolar Transistors - BJT Transistor 200mW
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Taiwan Semiconductor |
| DC Current Gain hFE Max | 800 |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum DC Collector Current | 0.1 A |
| RoHS | Y |
| Continuous Collector Current | 0.1 A |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC846/7/8 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 30 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 420 |
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