BC847PNH6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BC847PNH6327XTSA1
- Description Bipolar Transistors - BJT AF TRANSISTOR
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 1.25 mm |
| Part # Aliases | 847PN BC BC847PNH6327XT H6327 SP000747288 |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 450 |
| Unit Weight | 0.000265 oz |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| Length | 2 mm |
| Maximum DC Collector Current | 200 mA |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Collector-Emitter Saturation Voltage | 200 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC847 |
| Height | 0.9 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 60 C |
| Pd - Power Dissipation | 250 mW |
| DC Collector/Base Gain hfe Min | 200 |
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