BC847BLP4-7
- Manufacturer Diodes Incorporated
- Part Number BC847BLP4-7
- Description Bipolar Transistors - BJT 250mW 45V
- Category Bipolar Transistors - BJT
Specifications
| Package | DFN-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 0.6 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 200 at 2 mA, 5 V |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 100 MHz |
| Length | 1 mm |
| Maximum DC Collector Current | 200 mA |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 600 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC847B |
| Height | 0.35 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 mW |
| DC Collector/Base Gain hfe Min | 200 |
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