BC817K40E6327XT
- Manufacturer Infineon Technologies
- Part Number BC817K40E6327XT
- Description Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | 817K-40 BC BC817K40E6327HTSA1 E6327 SP000271895 |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 630 at 100 mA, 1 V |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 170 MHz |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 1000 mA |
| Continuous Collector Current | 500 mA |
| Collector-Emitter Saturation Voltage | 0.7 V |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Pd - Power Dissipation | 500 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 250 at 100 mA, 1 V |
Need pricing on BC817K40E6327XT?
Tell us your quantity and target price. We reply the same business day.