BC817K25WH6433XTMA1
- Manufacturer Infineon Technologies
- Part Number BC817K25WH6433XTMA1
- Description Bipolar Transistors - BJT NPN Silicon AF Transistor
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | 817K-25W BC BC817K25WH6433XT H6433 SP000786166 |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 400 at 100 mA, 1 V |
| Unit Weight | 0.000176 oz |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 170 MHz |
| Maximum DC Collector Current | 1000 mA |
| RoHS | Y |
| Continuous Collector Current | 500 mA |
| Collector-Emitter Saturation Voltage | 0.7 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC817 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Pd - Power Dissipation | 250 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 160 at 100 mA, 1 V |
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