BC337-25 TRE
- Manufacturer Central Semiconductor
- Part Number BC337-25 TRE
- Description Bipolar Transistors - BJT 50Vcbo 45Vceo NPN 5.0Vebo 800mA 625mW
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Reel |
| Min. Pack | 10,000 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 400 |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 210 MHz |
| Maximum DC Collector Current | 800 mA |
| RoHS | Y |
| Continuous Collector Current | 800 mA |
| Collector-Emitter Saturation Voltage | 0.7 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC337 |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 625 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 160 |
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