BC 850C E6327
- Manufacturer Infineon Technologies
- Part Number BC 850C E6327
- Description Bipolar Transistors - BJT NPN 30 V 100 mA
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 1.3 mm |
| Part # Aliases | BC850CE6327HTSA1 BC85CE6327XT SP000010563 |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 800 |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| Length | 2.9 mm |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 200 mA |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Collector-Emitter Saturation Voltage | 200 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BC850 |
| Height | 1 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 330 mW |
| DC Collector/Base Gain hfe Min | 420 |
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