AUIRFR5505
- Manufacturer Infineon / IR
- Part Number AUIRFR5505
- Description MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 110 mOhms |
| Width | 6.22 mm |
| Qg - Gate Charge | 21.3 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | |
| Fall Time | 16 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon / IR |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 18 A |
| Length | 6.5 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 2.3 mm |
| Typical Turn-On Delay Time | 12 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 57 W |
| Rise Time | 28 ns |
| Technology | Si |
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