AUIRF2804S-7P
- Manufacturer Infineon / IR
- Part Number AUIRF2804S-7P
- Description MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
- Category MOSFET
Specifications
| Package | TO-263-7 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 1.2 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 9.25 mm |
| Qg - Gate Charge | 260 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | SP001521640 |
| Fall Time | 100 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon / IR |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 220 S |
| Id - Continuous Drain Current | 320 A |
| Length | 10 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 110 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 4.4 mm |
| Typical Turn-On Delay Time | 17 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 330 W |
| Rise Time | 150 ns |
| Technology | Si |
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