AUIRF1405ZS
- Manufacturer Infineon / IR
- Part Number AUIRF1405ZS
- Description MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 5.3 mOhms |
| Width | 9.25 mm |
| Qg - Gate Charge | 120 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | SP001519512 |
| Fall Time | 82 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon / IR |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 150 A |
| Length | 10 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 48 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 4.4 mm |
| Typical Turn-On Delay Time | 18 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 230 W |
| Rise Time | 110 ns |
| Technology | Si |
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