APTGT225DA170G
- Manufacturer Microchip / Microsemi
- Part Number APTGT225DA170G
- Description IGBT Modules Power Module - IGBT
- Category IGBT Modules
Specifications
| Package | SP6 |
| Packaging | Tube |
| Min. Pack | 100 |
| Gate-Emitter Leakage Current | 600 nA |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | Chassis Mount |
| Technology | Si |
| Brand | Microchip / Microsemi |
| Continuous Collector Current at 25 C | 340 A |
| Collector-Emitter Saturation Voltage | 2 V |
| Collector- Emitter Voltage VCEO Max | 1.7 kV |
| Unit Weight | 3.880136 oz |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 1.25 kW |
| Configuration | Single |
| Maximum Operating Temperature | + 100 C |
| RoHS | Y |
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