APTGT200A602G
- Manufacturer Microchip / Microsemi
- Part Number APTGT200A602G
- Description IGBT Modules DOR CC20007
- Category IGBT Modules
Specifications
| Package | SP2-18 |
| Packaging | Bulk |
| Min. Pack | 100 |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | Chassis Mount |
| Technology | Si |
| Brand | Microchip / Microsemi |
| Continuous Collector Current at 25 C | 290 A |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Unit Weight | 2.821917 oz |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 625 W |
| Configuration | Dual |
| Maximum Operating Temperature | + 100 C |
| RoHS | Y |
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