APT60GT60JRD
- Manufacturer Microchip / Microsemi
- Part Number APT60GT60JRD
- Description IGBT Modules FG, IGBT-COMBI, 600V, 60A, SOT-227
- Category IGBT Modules
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Collector-Emitter Saturation Voltage | 2 V |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | Screw Mount |
| Technology | Si |
| Brand | Microchip / Microsemi |
| Continuous Collector Current at 25 C | 93 A |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 378 W |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
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