APT50GT60BRDQ2G
- Manufacturer Microchip / Microsemi
- Part Number APT50GT60BRDQ2G
- Description IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 120 nA |
| Continuous Collector Current Ic Max | 110 A |
| Width | 16.26 mm |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 110 A |
| Product Category | IGBT Transistors |
| Brand | Microchip / Microsemi |
| Unit Weight | 1.340411 oz |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Tradename | Thunderbolt IGBT |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 55 C to + 150 C |
| Length | 21.46 mm |
| Maximum Gate Emitter Voltage | 30 V |
| RoHS | Y |
| Continuous Collector Current | 110 A |
| Collector-Emitter Saturation Voltage | 2 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Height | 5.31 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 446 W |
| Technology | Si |
Need pricing on APT50GT60BRDQ2G?
Tell us your quantity and target price. We reply the same business day.