APT27HZTR-G1
- Manufacturer Diodes Incorporated
- Part Number APT27HZTR-G1
- Description Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Ammo Pack |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 9 V |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 40 at 100 mA, 10 V |
| Unit Weight | 0.016000 oz |
| Collector- Emitter Voltage VCEO Max | 450 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Maximum DC Collector Current | 1.6 A |
| RoHS | Y |
| Continuous Collector Current | 0.8 A |
| Collector-Emitter Saturation Voltage | 500 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | APT27 |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 800 mW |
| DC Collector/Base Gain hfe Min | 6 at 300 mA, 10 V |
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