APT13005SI-G1
- Manufacturer Diodes Incorporated
- Part Number APT13005SI-G1
- Description Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 9 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 35 at 1 A, 5 V |
| Unit Weight | 0.011993 oz |
| Collector- Emitter Voltage VCEO Max | 450 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 4 MHz |
| Maximum DC Collector Current | 6.4 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 300 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | APT1300 |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 25 W |
| DC Collector/Base Gain hfe Min | 20 at 1 A, 5 V |
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