APT100GT60JRDQ4
- Manufacturer Microchip / Microsemi
- Part Number APT100GT60JRDQ4
- Description IGBT Modules FG, IGBT-COMBI, 600V,100A, SOT-227
- Category IGBT Modules
Specifications
| Package | ISOTOP-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 300 nA |
| Product | IGBT Silicon Carbide Modules |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | SMD/SMT |
| Technology | SiC |
| Brand | Microchip / Microsemi |
| Continuous Collector Current at 25 C | 148 A |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Maximum Gate Emitter Voltage | 30 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 W |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| RoHS | Y |
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