ALD212900PAL
- Manufacturer Advanced Linear Devices
- Part Number ALD212900PAL
- Description MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
- Category MOSFET
Specifications
| Package | PDIP-8 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 10 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 20 mV |
| Vgs - Gate-Source Voltage | 10.6 V |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Advanced Linear Devices |
| Unit Weight | 0.032805 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 70 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 79 mA |
| Rds On - Drain-Source Resistance | 14 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 10 ns |
| Subcategory | MOSFETs |
| Channel Mode | Depletion |
| Series | ALD212900P |
| Typical Turn-On Delay Time | 10 ns |
| Minimum Operating Temperature | 0 C |
| Pd - Power Dissipation | 500 mW |
| Technology | Si |
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