AFV10700H-1090
- Manufacturer NXP Semiconductors
- Part Number AFV10700H-1090
- Description RF MOSFET Transistors AFV10700H 1030-1090 MHz Reference Circuit
- Category RF MOSFET Transistors
Specifications
| Package | NI-780H-4L |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 105 V |
| Transistor Polarity | Dual N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Part # Aliases | 935358817598 |
| Type | RF Power MOSFET |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Number of Channels | 2 Channel |
| Gain | 19.2 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 2.6 A |
| Output Power | 700 W |
| Operating Frequency | 1030 MHz to 1090 MHz |
| Subcategory | MOSFETs |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 526 W |
| Technology | Si |
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