A2T23H200W23SR6
- Manufacturer NXP Semiconductors
- Part Number A2T23H200W23SR6
- Description RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V
- Category RF MOSFET Transistors
Specifications
| Package | ACP-1230S-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
| Transistor Polarity | Dual N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Part # Aliases | 935347117128 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | 0 oz |
| Number of Channels | 2 Channel |
| Gain | 15.5 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 1.8 A |
| Output Power | 51 W |
| Operating Frequency | 2300 MHz to 2400 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Technology | Si |
Need pricing on A2T23H200W23SR6?
Tell us your quantity and target price. We reply the same business day.