A2T18S262W12NR3
- Manufacturer NXP Semiconductors
- Part Number A2T18S262W12NR3
- Description RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
- Category RF MOSFET Transistors
Specifications
| Package | OM-880X-2 |
| Packaging | Reel |
| Min. Pack | 250 |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Moisture Sensitive | Yes |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Part # Aliases | 935346497528 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | 0.133706 oz |
| Number of Channels | 1 Channel |
| Gain | 19.3 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 3.2 A |
| Output Power | 56 W |
| Operating Frequency | 1805 MHz to 1880 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Minimum Operating Temperature | - 40 C |
| Technology | Si |
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