A2T08VD021NT1
- Manufacturer NXP Semiconductors
- Part Number A2T08VD021NT1
- Description RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728 960 MHz, 2 W Avg., 48 V
- Category RF MOSFET Transistors
Specifications
| Package | PQFN-24 |
| Packaging | Reel |
| Min. Pack | 1,000 |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 105 V |
| Transistor Polarity | Dual N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Moisture Sensitive | Yes |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Part # Aliases | 935361777528 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Number of Channels | 2 Channel |
| Gain | 19.1 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 80 mA |
| Output Power | 2 W |
| Operating Frequency | 728 MHz to 960 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Minimum Operating Temperature | - 40 C |
| Technology | Si |
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