A2G26H281-04SR3
- Manufacturer NXP Semiconductors
- Part Number A2G26H281-04SR3
- Description RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
- Category RF JFET Transistors
Specifications
| Package | NI-780S-4 |
| Packaging | Reel |
| Min. Pack | 250 |
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 2.3 V |
| Part # Aliases | 935332873128 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 8 V, 0 V |
| Brand | NXP Semiconductors |
| Unit Weight | 0.164077 oz |
| Gain | 14.2 dB |
| Product Type | RF JFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Output Power | 50 W |
| Operating Frequency | 2496 MHz to 2690 MHz |
| RoHS | E |
| Configuration | Dual |
| Subcategory | Transistors |
| Minimum Operating Temperature | - 55 C |
| Technology | GaN |
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