A1P35S12M3-F
- Manufacturer STMicroelectronics
- Part Number A1P35S12M3-F
- Description IGBT Modules PTD HIGH VOLTAGE
- Category IGBT Modules
Specifications
| Package | ACEPACK1 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 500 nA |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Product Type | IGBT Modules |
| Mounting Style | Press Fit |
| Series | A1P35S12M3-F |
| Brand | STMicroelectronics |
| Continuous Collector Current at 25 C | 35 A |
| Collector-Emitter Saturation Voltage | 1.95 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Tradename | ACEPACK |
| Maximum Gate Emitter Voltage | 20 V |
| Technology | Si |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 250 W |
| Configuration | 6-Pack |
| Maximum Operating Temperature | + 150 C |
| RoHS | Y |
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