2STR1160
- Manufacturer STMicroelectronics
- Part Number 2STR1160
- Description Bipolar Transistors - BJT Low-Volt Fast Switch NPN Pwr Tran
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.6 mm |
| Product Category | Bipolar Transistors - BJT |
| Brand | STMicroelectronics |
| DC Current Gain hFE Max | 180 at 500 mA, 2 V |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Length | 3.04 mm |
| Maximum DC Collector Current | 1 A |
| RoHS | Y |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2STR1160 |
| Height | 1.3 mm |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 500 mW |
| DC Collector/Base Gain hfe Min | 180 at 500 mA, 2 V, 85 at 1 A, 2 V |
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