2SK879-Y(TE85L,F)
- Manufacturer Toshiba
- Part Number 2SK879-Y(TE85L,F)
- Description JFET Junction FET N-Ch 0.3 to 6.5mA 10mA
- Category JFET
Specifications
| Package | SC-70-3 |
| Min. Pack | 1 |
| Packaging | |
| Product Category | JFET |
| Transistor Polarity | N-Channel |
| Gate-Source Cutoff Voltage | - 5 V |
| Series | 2SK879 |
| Brand | Toshiba |
| Id - Continuous Drain Current | 6.5 mA |
| Unit Weight | 0.000219 oz |
| Pd - Power Dissipation | 100 mW |
| Mounting Style | SMD/SMT |
| Vds - Drain-Source Breakdown Voltage | 10 V |
| Drain-Source Current at Vgs=0 | 1.2 mA |
| Vgs - Gate-Source Breakdown Voltage | - 30 V |
| Configuration | Single |
| Type | JFET |
| RoHS | Y |
Need pricing on 2SK879-Y(TE85L,F)?
Tell us your quantity and target price. We reply the same business day.