2SK3566(STA4,Q,M)
- Manufacturer Toshiba
- Part Number 2SK3566(STA4,Q,M)
- Description MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm
- Category MOSFET
Specifications
| Package | TO-220FP-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Transistor Polarity | N-Channel |
| Width | 4.5 mm |
| Qg - Gate Charge | 12 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 30 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 2 S |
| Id - Continuous Drain Current | 2.5 A |
| Length | 10 mm |
| Rds On - Drain-Source Resistance | 5.6 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Series | 2SK3566 |
| Height | 15 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 40 W |
| Rise Time | 20 ns |
| Technology | Si |
Need pricing on 2SK3566(STA4,Q,M)?
Tell us your quantity and target price. We reply the same business day.