2SK3475TE12LF
- Manufacturer Toshiba
- Part Number 2SK3475TE12LF
- Description RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS
- Category RF MOSFET Transistors
Specifications
| Package | PW-Mini-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.4 V |
| Vgs - Gate-Source Voltage | 10 V |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | Toshiba |
| Gain | 14.9 dB |
| Product Type | RF MOSFET Transistors |
| Id - Continuous Drain Current | 1 A |
| Output Power | 630 mW |
| Operating Frequency | 520 MHz |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | 2SK3475 |
| Packaging | |
| Pd - Power Dissipation | 3 W |
| Technology | Si |
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