2SK3176(F)
- Manufacturer Toshiba
- Part Number 2SK3176(F)
- Description MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
- Category MOSFET
Specifications
| Package | TO-3PN-3 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Width | 4.5 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 25 ns |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.245577 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 30 A |
| Length | 15.5 mm |
| Rds On - Drain-Source Resistance | 52 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 2SK3176 |
| Height | 20 mm |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 W |
| Rise Time | 15 ns |
| Technology | Si |
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